CP591X-2N2907A Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – PNP - General Purpose Transistor Die

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CP591X-2N2907A
PNP - General Purpose Transistor Die
0.6 Amp, 60 Volt
The CP591X-2N2907A is a silicon PNP transistor designed for general purpose applications.
MECHANICAL SPECIFICATIONS:
Die Size
19.3 x 19.3 MILS
Die Thickness
5.9 MILS
Base Bonding Pad Size
3.5 x 4.3 MILS
Emitter Bonding Pad Size 3.5 x 4.5 MILS
Top Side Metalization
Al – 13,000Å
Back Side Metalization
Au – 9,000Å
Scribe Alley Width
1.75 MILS
Wafer Diameter
5 INCHES
Gross Die Per Wafer
45,900
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
TJ, Tstg
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=50V
ICEV
VCE=30V, VEB=0.5V
BVCBO
IC=10µA
60
BVCEO
IC=10mA
60
BVEBO
IE=10µA
5.0
VCE(SAT) IC=150mA, IB=15mA
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT) IC=150mA, IB=15mA
VBE(SAT) IC=500mA, IB=50mA
hFE
VCE=10V, IC=0.1mA
75
hFE
VCE=10V, IC=1.0mA
100
hFE
VCE=10V, IC=10mA
100
hFE
VCE=10V, IC=150mA
100
hFE
VCE=10V, IC=500mA
50
fT
VCE=20V, IC=50mA, f=100MHz
200
Cob
VCB=10V, IE=0, f=1.0MHz
Cib
VEB=2.0V, IC=0, f=1.0MHz
ton
VCC=30V, IC=150mA, IB1=15mA
toff
VCC=6.0V, IC=150mA, IB1=IB2=15mA
60
60
5.0
600
-65 to +150
MAX
10
50
0.4
1.6
1.3
2.6
UNITS
V
V
V
mA
°C
UNITS
nA
nA
V
V
V
V
V
V
V
300
MHz
8.0
pF
30
pF
45
ns
100
ns
R2 (25-April 2017)