CP527 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – PNP - Darlington Transistor Die

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CP527
PNP - Darlington Transistor Die
10 Amp, 80 Volt
The CP527 die is a silicon PNP Darlington power transistor designed for high gain amplifier
applications.
MECHANICAL SPECIFICATIONS:
Die Size
110 x 110 MILS
Die Thickness
10.6 MILS
Base Bonding Pad Size
21 x 24 MILS
Emitter Bonding Pad Size 24 x 42 MILS
Top Side Metalization
Al – 20,000Å
Back Side Metalization
Ni/Ag – 2,000Å/10,000Å
Scribe Alley Width
4.3 mils
Wafer Diameter
4 INCHES
Gross Die Per Wafer
700
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
TJ, Tstg
80
80
5.0
10
-65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEO
VCE=80V
IEBO
VEB=5.0V
BVCBO
IC=100μA
80
BVCEO
IC=3.0mA
80
BVEBO
IE=5.0mA
5.0
VCE(SAT) IC=5.0A, IB=10mA
VBE(ON)
VCE=3.0V, IC=5.0A
hFE
VCE=3.0V, IC=5.0A
1.0K
Cob
VCB=10V, IE=0, f=1.0MHz
MAX
1.0
10
2.0
2.8
20K
200
UNITS
V
V
V
A
°C
UNITS
mA
mA
V
V
V
V
V
pF
R1 (21-October 2014)