CP527-2N6299 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – PNP - Darlington Transistor Die

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CP527-2N6299
PNP - Darlington Transistor Die
8.0 Amp, 80 Volt
The CP527-2N6299 is a silicon PNP Darlington power transistor designed for high gain amplifier
applications.
MECHANICAL SPECIFICATIONS:
Die Size
110 x 110 MILS
Die Thickness
10.6 MILS
Base Bonding Pad Size
21 x 24 MILS
Emitter Bonding Pad Size 24 x 42 MILS
Top Side Metalization
Al – 20,000Å
Back Side Metalization
Ni/Ag – 2,000Å/10,000Å
Scribe Alley Width
4.3 mils
Wafer Diameter
4 INCHES
Gross Die Per Wafer
875
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
TJ, Tstg
80
80
5.0
8.0
-65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=80V, VBE=1.5V
ICEO
VCE=40V
IEBO
VEB=5.0V
BVCEO
IC=100mA
80
VCE(SAT) IC=4.0A, IB=16mA
VCE(SAT) IC=8.0A, IB=80mA
VBE(SAT) IC=8.0A, IB=80mA
VBE(ON)
VCE=3.0V, IC=4.0A
hFE
VCE=3.0V, IC=4.0A
750
hFE
VCE=3.0V, IC=8.0A
100
hfe
VCE=3.0V, IC=3.0A, f=1.0kHz
300
fT
VCE=3.0V, IC=3.0A, f=1.0MHz
4.0
Cob
VCB=10V, IE=0, f=100kHz
MAX
0.5
0.5
2.0
2.0
3.0
4.0
2.8
18K
300
UNITS
V
V
V
A
°C
UNITS
mA
mA
mA
V
V
V
V
V
MHz
pF
R1 (28-June 2016)