CP517 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Power Transistor PNP - Darlington Chip

PROCESS CP517
Power Transistor
PNP - Darlington Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL BASE
111 X 111 MILS
10 MILS
20 X 30 MILS
20 X 26 MILS
Al - 30,000Å
Au/Cr/Ni/Au - 6,000Å
GROSS DIE PER 5 INCH WAFER
910
PRINCIPAL DEVICE TYPES
2N6040
2N6041
2N6042
2N6299
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R1 (1-August 2002)