CP396V-2N2369A Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – NPN - Saturated Switch Transistor Die

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CP396V-2N2369A
NPN - Saturated Switch Transistor Die
0.2 Amp, 40 Volt
The CP396V-2N2369A is a silicon NPN transistor designed for high speed saturated switching
applications.
MECHANICAL SPECIFICATIONS:
Die Size
14.2 x 8.7 MILS
Die Thickness
7.1 MILS
Base Bonding Pad Size
2.9 x 3.7 MILS
Emitter Bonding Pad Size 2.9 x 3.7 MILS
Top Side Metalization
Al – 13,000Å
Back Side Metalization
Au-As – 9,000Å
Scribe Alley Width
1.96 MILS
Wafer Diameter
5 INCHES
Gross Die Per Wafer
139,524
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
TJ, Tstg
40
40
15
4.5
200
-65 to +200
UNITS
V
V
V
V
mA
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=20V
BVCBO
IC=10μA
40
BVCES
IC=10μA
40
BVCEO
IC=10mA
15
BVEBO
IE=10μA
4.5
VCE(SAT) IC=10mA, IB=1.0mA
VCE(SAT) IC=30mA, IB=3.0mA
VCE(SAT) IC=100mA, IB=10mA
VBE(SAT) IC=10mA, IB=1.0mA
700
VBE(SAT) IC=30mA, IB=3.0mA
VBE(SAT) IC=100mA, IB=10mA
hFE
VCE=1.0V, IC=10mA
40
hFE
VCE=0.4V, IC=30mA
30
hFE
VCE=1.0V, IC=100mA
20
fT
VCE=10V, IC=10mA, f=100MHz
500
Cob
VCB=5.0V, IE=0, f=140kHz
ton
VCC=3.0V, IC=10mA, IB1=3.0mA
toff
IB2=1.5mA
MAX
400
200
250
500
850
1.15
1.6
120
4.0
12
18
UNITS
nA
V
V
V
V
mV
mV
mV
mV
V
V
MHz
pF
ns
ns
PACKING OPTIONS:
• CP396V-2N2369A-CT: Singulated die in waffle pack; 700 die per tray.
• CP396V-2N2369A-WN: Full wafer, unsawn, 100% tested with reject die inked.
• CP396V-2N2369A-WR: Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked.
R0 (6-March 2015)