CP382X Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Small Signal Transistor NPN - Low VCE(SAT) Transistor Chip

PROCESS CP382X
Small Signal Transistor
NPN - Low VCE(SAT) Transistor Chip
PROCESS DETAILS
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
26 x 26 MILS
5.9 MILS
5.5 x 5.5 MILS
5.5 x 5.5 MILS
Al - 30,000Å
Au - 12,000Å
GROSS DIE PER 5 INCH WAFER
25,536
PRINCIPAL DEVICE TYPES
CMLT3820G
CMPT3820
CXT3820
w w w. c e n t r a l s e m i . c o m
R0 (9-September 2010)