CP379X Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip

PROCESS CP379X
Small Signal MOSFET Transistor
N-Channel Enhancement-Mode Transistor Chip
PROCESS DETAILS
Die Size
Die Thickness
Gate Bonding Pad Area
Source Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
31.5 x 31.5 MILS
5.5 MILS
3.9 x 3.9 MILS
19.3 x 21.3 MILS
Al-Si - 35,000Å
Ti/Ni/Ag - 2,000Å/3,000Å/20,000Å
GROSS DIE PER 6 INCH WAFER
24,000
PRINCIPAL DEVICE TYPE
CMPDM7002AHC
w w w. c e n t r a l s e m i . c o m
R0 (20-September 2010)