CP375 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – N-Channel MOSFET Die Enhancement-Mode

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CP375
N-Channel MOSFET Die
Enhancement-Mode
The CP375 medium power N-Channel MOSFET is designed for power management and load
switching applications. The 7.5 mil thick die provides an ultra low profile device that is readily
attached using standard die attach wire bond processes.
APPLICATIONS:
• Load switching
• Power management
• DC-DC conversion
FEATURES:
• Low on-resistance, rDS(ON)
• Low gate charge, Qgs
• High drain current density
MECHANICAL SPECIFICATIONS:
Die Size
62 x 38 MILS
Die Thickness
7.5 MILS
Gate Bonding Pad Area
13.7 x 18.8 MILS
Source Bonding Pad Area 30 x 55 MILS
Top Side Metalization
Al - 40,000Å
Back Side Metalization
Ti/Ni/Ag - 1,000Å/3,000Å/10,000Å
Scribe Alley Width
3.15 MILS
Wafer Diameter
8 INCHES
Gross Die Per Wafer
18,700
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Operating and Storage Junction Temperature
SYMBOL
VDS
VGS
ID
IDM
TJ, Tstg
30
20
11
50
-55 to +150
UNITS
V
V
A
A
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=20V, VDS=0
IDSS
VDS=30V, VGS=0
BVDSS
VGS=0, ID=250μA
30
VGS(th)
VGS=VDS, ID=250μA
1.0
1.8
VSD
VGS=0, IS=2.6A
rDS(ON)
VGS=10V, ID=11A
14
rDS(ON)
VGS=4.5V, ID=9.0A
18
Crss
VDS=15V, VGS=0, f=1.0MHz
100
Ciss
VDS=15V, VGS=0, f=1.0MHz
860
Coss
VDS=15V, VGS=0, f=1.0MHz
120
MAX
100
1.0
UNITS
nA
μA
V
3.0
V
1.2
V
20
mΩ
30
mΩ
pF
pF
pF
R0 (13-August 2013)