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| CP372 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – N-Channel MOSFET Enhancement-Mode MOSFET Chip | |||
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PROCESS CP372
N-Channel MOSFET
Enhancement-Mode MOSFET Chip
PROCESS DETAILS
Die Size
Die Thickness
Gate Bonding Pad Area
Source Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
37 x 63 MILS
7.5 MILS
6.9 x 6.8 MILS
30 x 55 MILS
Al - 40,000Ã
Ti/Ni/Ag - 1,000Ã
/3,000Ã
/10,000Ã
GROSS DIE PER 8 INCH WAFER
19,400
PRINCIPAL DEVICE TYPE
CXDM6053N
w w w. c e n t r a l s e m i . c o m
R0 (10-December 2012)
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