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CP370 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – N-Channel MOSFET Enhancement-Mode MOSFET Chip
PROCESS CP370
N-Channel MOSFET
Enhancement-Mode MOSFET Chip
PROCESS DETAILS
Die Size
Die Thickness
Gate Bonding Pad Area
Source Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
39 x 27 MILS
7.5 MILS
6.5 x 6.5 MILS
30 x 20 MILS
Al - 40,000Å
Ti/Ni/Ag - 1,000Å/3,000Å/10,000Å
GROSS DIE PER 8 INCH WAFER
43,500
PRINCIPAL DEVICE TYPE
CXDM3069N
w w w. c e n t r a l s e m i . c o m
R0 (10-December 2012)