CP357X Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Small Signal MOSFET Transistor N-Channel Enhancement-Mode MOSFET Chip

PROCESS CP357X
Small Signal MOSFET Transistor
N-Channel Enhancement-Mode MOSFET Chip
PROCESS DETAILS
Die Size
Die Thickness
Gate Bonding Pad Area
Source Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
22 x 17 MILS
5.9 MILS
3.9 x 3.9 MILS
14 x 9 MILS
Al-Si - 30,000Å
Au - 12,000Å
GROSS DIE PER 6 INCH WAFER
63,570
PRINCIPAL DEVICE TYPE
CMLDM3737
w w w. c e n t r a l s e m i . c o m
R0 (17-November 2010)