CP354X Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip

PROCESS CP354X
Small Signal MOSFET Transistor
N-Channel Enhancement-Mode Transistor Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Gate Bonding Pad Area
Source Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
21.7 x 21.7 MILS
5.5 MILS
4.7 x 4.7 MILS
4.7 x 10.2 MILS
Al-Si - 37,000Å
Au - 12,000Å
GROSS DIE PER 6 INCH WAFER
51,400
PRINCIPAL DEVICE TYPES
CMLM0305
CMLDM7003
CMPDM7003
CTLDM7003-M621
w w w. c e n t r a l s e m i . c o m
R2 (22-March 2010)