CP353V Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – Small Signal Transistors NPN - High Current Transistor Chip

PROCESS CP353V
Small Signal Transistors
NPN - High Current Transistor Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter 1 Bonding Pad Area
Emitter 2 Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
66 x 66 MILS
7.1 MILS
7.9 x 7.9 MILS
7.9 x 9.5 MILS
7.9 x 9.5 MILS
Al-Si 30,000Å
Au 12,000Å
GROSS DIER PER 5 INCH WAFER
3,878
PRINCIPAL DEVICE TYPES
CZT853
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R0 (23- September 2005)