CP348 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Power Transistor PNP - High Current Transistor Chip

PROCESS CP348
Power Transistor
NPN - High Current Transistor Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
82 x 82 MILS
9.1 MILS
13 x 17 MILS
13 x 25 MILS
Al-Si - 40,000Å
Ti/Ni/Ag - 2,000Å/3,000Å/20,000Å
GROSS DIE PER 5 INCH WAFER
2,449
PRINCIPAL DEVICE TYPE
BUY48
BACKSIDE COLLECTOR R0
w w w. c e n t r a l s e m i . c o m
R2 (1-June 2012)