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| CP343V Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – N-Channel Enhancement-Mode MOSFET Chip | |||
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PROCESS CP343V
High Voltage MOSFET
N-Channel Enhancement-Mode MOSFET Chip
PROCESS DETAILS
Die Size
Die Thickness
Gate Bonding Pad Area
Source Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
55 x 55 MILS
7.1 MILS
7.3 x 7.3 MILS
43 x 43 MILS
Al - 30,000Ã
Ti/Ni/Ag - 1,000Ã
/3,000Ã
/10,000Ã
GROSS DIE PER 6 INCH WAFER
7,774
PRINCIPAL DEVICE TYPE
CXDM1002N
w w w. c e n t r a l s e m i . c o m
R0 (19-March 2013)
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