CP337V Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – Small Signal Transistors NPN - Saturated Switch Transistor Chip

PROCESS CP337V
Small Signal Transistors
NPN - Saturated Switch Transistor Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
29 x 29 MILS
7.1 MILS
11.8 x 4.5 MILS
11.8 x 4.5 MILS
Al -
30,000Å
Au-As - 13,000Å
GROSS DIE PER 4 INCH WAFER
13,192
PRINCIPAL DEVICE TYPES
2N3725A
2N4014
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R0 (26-August 2005)