CP336V Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Small Signal Transistor NPN - High Voltage Transistor Chip

PROCESS CP336V
Small Signal Transistor
NPN - High Voltage Transistor Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
17.3 x 17.3 MILS
7.1 MILS
3.9 x 3.9 MILS
3.9 x 3.9 MILS
Al-Si - 30,000Å
Au - 12,000Å
GROSS DIE PER 5 INCH WAFER
57,735
PRINCIPAL DEVICE TYPES
CMPT5551
CTLT5551-M832D
CXT5551
CZT5551
CZT5551E
w w w. c e n t r a l s e m i . c o m
R1 (26-October 2010)