CP336V-2N5551 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – NPN - High Voltage Transistor Die

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CP336V-2N5551
NPN - High Voltage Transistor Die
The CP336V-2N5551 is a silicon NPN transistor designed for high voltage, general purpose
applications.
B
E
MECHANICAL SPECIFICATIONS:
Die Size
17.3 x 17.3 MILS
Die Thickness
7.1 MILS
Base Bonding Pad Size
3.9 x 3.9 MILS
Emitter Bonding Pad Size 3.9 x 3.9 MILS
Top Side Metalization
Al-Si – 17,000Å
Back Side Metalization
Au – 9,000Å
Scribe Alley Width
1.8 MILS
Wafer Diameter
5 INCHES
Gross Die Per Wafer
57,735
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Operating and Storage Junction Temperature
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS
ICBO
VCB=120V
IEBO
VEB=4.0V
BVCBO
IC=100µA
BVCEO
IC=1.0mA
BVEBO
IE=10µA
VCE(SAT) IC=10mA, IB=1.0mA
VCE(SAT) IC=50mA, IB=5.0mA
VBE(SAT) IC=50mA, IB=5.0mA
hFE
VCE=5.0V, IC=1.0mA
hFE
VCE=5.0V, IC=10mA
hFE
VCE=5.0V, IC=50mA
fT
VCE=10V, IC=10mA, f=100MHz
Cob
VCB=10V, IE=0, f=1.0MHz
SYMBOL
VCBO
VCEO
VEBO
IC
TJ, Tstg
MIN
180
160
6.0
80
80
30
100
180
160
6.0
600
-65 to +150
MAX
50
50
0.15
0.20
1.0
250
300
6.0
UNITS
V
V
V
mA
°C
UNITS
nA
nA
V
V
V
V
V
V
MHz
pF
R1 (30-March 2017)