CP331 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN - High Voltage Darlington Transistor Chip

PROCESS CP331
Power Transistor
NPN - High Voltage Darlington Transistor Chip
PROCESS DETAILS
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
39.4 x 39.4 MILS
9.1 MILS
7.9 x 7.9 MILS
7.9 x 7.9 MILS
Al-Si - 30,000Å
Au-As - 18,000Å
GROSS DIE PER 5 INCH WAFER
11,055
PRINCIPAL DEVICE TYPE
CZT2000
BACKSIDE COLLECTOR
R0
w w w. c e n t r a l s e m i . c o m
R0 (19-September 2011)