CP328X Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – N-Channel Enhancement-Mode MOSFET Chip

PROCESS CP328X
Small Signal MOSFET Transistor
N-Channel Enhancement-Mode MOSFET Chip
PROCESS DETAILS
Die Size
Die Thickness
Gate Bonding Pad Area
Source Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
15.7 x 15.7 MILS
5.5 MILS
3.9 x 3.9 MILS
9.1 x 8.1 MILS
Al-Si 30,000Å
Au - 9,000Å
GROSS DIE PER 6 INCH WAFER
95,200
PRINCIPAL DEVICE TYPE
CMPDM7002AE
w w w. c e n t r a l s e m i . c o m
R0 (31-October 2012)