CP327V Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Small Signal Transistor NPN - Silicon Darlington Transistor Chip

PROCESS CP327V
Small Signal Transistor
NPN - Silicon Darlington Transistor Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
23 x 23 MILS
7.1 MILS
4.7 x 4.7 MILS
4.7 x 4.7 MILS
Al-Si - 30,000Å
Au - 12,000Å
GROSS DIE PER 5 INCH WAFER
33,085
PRINCIPAL DEVICE TYPES
CMLT6427E
CMST6427E
BACKSIDE COLLECTOR
R0
w w w. c e n t r a l s e m i . c o m
R1 (9-September 2010)