CP326X Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – N-Channel Enhancement-Mode Transistor Chip

PROCESS CP326X
Small Signal MOSFET Transistor
N-Channel Enhancement-Mode Transistor Chip
PROCESS DETAILS
Die Size
Die Thickness
Gate Bonding Pad Area
Source Bonding Pad Area
Top Side Metalization
Back Side Metalization
33.5 x 25.6 MILS
5.5 MILS
4.7 x 4.7 MILS
20 x 12 MILS
Al-Si - 35,000Å
Au - 12,000Å
GEOMETRY
GROSS DIE PER 6 INCH WAFER
28,000
PRINCIPAL DEVICE TYPES
CMLDM7120
CMPDM7120G
w w w. c e n t r a l s e m i . c o m
R1 (22-March 2010)