CP324_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Small Signal MOSFET Transistor N- Channel Enhancement-Mode Transistor Chip

PROCESS CP324
Small Signal MOSFET Transistor
N- Channel Enhancement-Mode Transistor Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Gate Bonding Pad Area
Source Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
21.65 x 21.65 MILS
9.0 MILS
5.5 x 5.5 MILS
5.9 x 13.8 MILS
Al - 30,000Å
Au - 12,000Å
GROSS DIE PER 5 INCH WAFER
33,500
PRINCIPAL DEVICE TYPES
2N7002
BACKSIDE DRAIN
w w w. c e n t r a l s e m i . c o m
R3 (22-March 2010)