CP324X Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – N- Channel Enhancement-Mode Transistor Chip

PROCESS CP324X
Small Signal MOSFET Transistor
N- Channel Enhancement-Mode Transistor Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Gate Bonding Pad Area
Source Bonding Pad Area
Top Side Metalization
Back Side Metalization
EPITAXIAL PLANAR
21.6 x 21.6 MILS
5.9 MILS
5.5 x 5.5 MILS
5.9 x 13.8 MILS
Al - 30,000Å
Au - 12,000Å
GEOMETRY
GATE
SOURCE
GROSS DIE PER 5 INCH WAFER
33,500
PRINCIPAL DEVICE TYPES
2N7002
BACKSIDE DRAIN
R0
w w w. c e n t r a l s e m i . c o m
R0 (30-August 2011)