CP324 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Small Signal MOSFET Transistor N- Channel Enhancement-Mode Transistor Chip

PROCESS CP324
Central^TM
Small Signal MOSFET Transistor
N - Channel Enhancement-Mode Transistor Chip
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Gate Bonding Pad Area
Source Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
21.65 x 21.65 MILS
9.0 MILS
5.5 x 5.5 MILS
5.9 x 13.8 MILS
Al - 30,000Å
Au - 12,000Å
GROSS DIE PER 5 INCH WAFER
35,900
PRINCIPAL DEVICE TYPES
2N7002
BACKSIDE DRAIN
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R1 (1-August 2002)