CP319 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Power Transistor NPN - Silicon Power Transistor Chip

PROCESS CP319
Power Transistor
NPN - Silicon Power Transistor Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
EPITAXIAL PLANAR
87 x 87 MILS
9.0 MILS
24 x 15 MILS
38 x 16 MILS
Al - 30,000Å
Ti/Ni/Ag - 11,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
1,460
PRINCIPAL DEVICE TYPES
CZTA44HC
TIP47
TIP48
TIP50
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R2 (21-September 2003)