CP318V_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Small Signal Transistor NPN - High Voltage Transistor Chip

PROCESS CP318V
Small Signal Transistor
NPN - High Voltage Transistor Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
26 x 26 MILS
7.1 MILS ± 0.6 MILS
5.5 x 5.5 MILS
5.5 x 5.5 MILS
Al-Si - 17,000Å
Au - 12,000Å
GROSS DIE PER 4 INCH WAFER
25,536
PRINCIPAL DEVICE TYPES
MPS455
BACKSIDE COLLECTOR
w w w. c e n t r a l s e m i . c o m
R2 (22-March 2010)