CP317_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Small Signal Transistor NPN - RF Transistor Chip

PROCESS CP317
Small Signal Transistor
NPN - RF Transistor Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
BACKSIDE COLLECTOR
EPITAXIAL PLANAR
14.5 x 14.5 MILS
9.0 MILS
2.4 x 2.2 MILS
2.4 x 2.2 MILS
Al - 30,000Å
Au - 18,000Å
GROSS DIE PER 4 INCH WAFER
53,788
PRINCIPAL DEVICE TYPES
CMPT918
2N918
2N2857
2N5179
2N5770
BFY90
PN3563
PN3564
w w w. c e n t r a l s e m i . c o m
R3 (22-March 2010)