CP317 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Small Signal Transistor NPN - RF Transistor Chip

PROCESS CP317
Small Signal Transistor
NPN - RF Transistor Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
BACKSIDE COLLECTOR
EPITAXIAL PLANAR
14.5 x 14.5 MILS
9.0 MILS
2.4 x 2.2 MILS
2.4 x 2.2 MILS
Al - 30,000Å
Au - 18,000Å
GROSS DIE PER 4 INCH WAFER
53,730
PRINCIPAL DEVICE TYPES
CMPT918
2N918
2N2857
2N5179
2N5770
BFY90
PN3563
PN3564
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R2 (1-August 2002)