CP316V_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Small Signal Transistors NPN - High Voltage Transistor Chip

PROCESS CP316V
Small Signal Transistors
NPN - High Voltage Transistor Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
20 x 20 MILS
7.1 MILS
4.0 x 4.0 MILS
4.7 x 4.7 MILS
Al - 30,000Å
Au - 18,000Å
GROSS DIE PER 5 INCH WAFER
57,735
PRINCIPAL DEVICE TYPES
CMPT5551
CXT5551
CZT5551
2N5551
w w w. c e n t r a l s e m i . c o m
R2 (22-March 2010)