CP315V Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – Power Transistors NPN - High Current Transistor Chip

PROCESS CP315V
Power Transistors
NPN - High Current Transistor Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
Epitaxial Planar
40 x 40 MILS
7.1 MILS
7.9 x 8.7 MILS
9.0 x 14 MILS
Al - 30,000Å
Au - 18,000Å
GROSS DIE PER 4 INCH WAFER
6,936
PRINCIPAL DEVICE TYPES
CXT3150
CZT3150
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R0 (5- January 2006)