CP312_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Power Transistor NPN - Amp/Switch Transistor Chip

PROCESS CP312
Power Transistor
NPN - Amp/Switch Transistor Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
70 x 70 MILS
9.0 MILS
11.4 x 18.1 MILS
13.8 x 23.6 MILS
Al - 30,000Å
Ti/Ni/Ag - 11,300Å
GROSS DIE PER 4 INCH WAFER
2,230
PRINCIPAL DEVICE TYPES
CZT3120
w w w. c e n t r a l s e m i . c o m
R4 (22-March 2010)