CP312 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Power Transistor NPN - Amp/Switch Transistor Chip

PROCESS CP312
Power Transistor
NPN - Amp/Switch Transistor Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
E
EPITAXIAL PLANAR
70 x 70 MILS
9.0 MILS
11.4 x 18 MILS
13.7 x 23.6 MILS
Al - 30,000Å
Ti / Ni / Ag 11,300Å
GROSS DIE PER 4 INCH WAFER
2,200
PRINCIPAL DEVICE TYPES
CZT3120
B
BACKSIDE COLLECTOR
R1
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R3 (26-March 2004)