CP311 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Power Transistor NPN High Voltage Transistor Chip

PROCESS CP311
Power Transistor
NPN High Voltage Transistor Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
109.5 x 109.5 MILS
9.0 MILS
23.6 x 15.4 MILS
37.8 x 15.8 MILS
Al - 30,000Å
Ti / Ni / Ag - 11,300Å
GROSS DIE PER 4 INCH WAFER
900
PRINCIPAL DEVICE TYPES
CJDD3110
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R2 (15- September 2003)