CP310 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Small Signal Transistor NPN - High Voltage Transistor Chip

PROCESS CP310
Small Signal Transistor
NPN - High Voltage Transistor Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
EPITAXIAL PLANAR
26 x 26 MILS
9.0 MILS
6.1 x 4.9 MILS
5.2 x 5.2 MILS
Al - 30,000Å
Au - 18,000Å
GROSS DIE PER 4 INCH WAFER
16,880
PRINCIPAL DEVICE TYPES
2N3439
2N3440
CMPTA42
CMPTA44
CMPT6517
CXTA44
CZTA42
CZTA44
MPSA42
MPSA44
R2 (1-August 2002)