CP310-MPSA42 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – NPN - High Voltage Transistor Die

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CP310-MPSA42
NPN - High Voltage Transistor Die
The CP310-MPSA42 is a silicon NPN transistor designed for high voltage applications.
B
E
BACKSIDE COLLECTOR
MECHANICAL SPECIFICATIONS:
Die Size
26 x 26 MILS
Die Thickness
9.0 MILS
Base Bonding Pad Size
6.1 x 4.9 MILS
Emitter Bonding Pad Size 5.2 x 5.2 MILS
Top Side Metalization
Al – 30,000Å
Back Side Metalization
Au – 9,000Å
Scribe Alley Width
2.2 MILS
Wafer Diameter
5 INCHES
Gross Die Per Wafer
R2
25,214
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Operating and Storage Junction Temperature
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS
ICBO
VCB=200V
IEBO
VEB=6.0V
BVCBO
IC=100µA
BVCEO
IC=1.0mA
BVEBO
IE=100µA
VCE(SAT) IC=20mA, IB=2.0mA
VBE(SAT) IC=20mA, IB=2.0mA
hFE
VCE=10V, IC=1.0mA
hFE
VCE=10V, IC=10mA
hFE
VCE=10V, IC=30mA
fT
VCE=20V, IC=10mA, f=100MHz
SYMBOL
VCBO
VCEO
VEBO
IC
TJ_, Tstg
MIN
300
300
6.0
25
40
40
50
300
300
6.0
500
-65 to +150
MAX
100
100
0.5
0.9
UNITS
V
V
V
mA
°C
UNITS
nA
nA
V
V
V
V
V
MHz
R1 (9-May 2016)