CP309 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Power Transistor NPN - Low Saturation Transistor Chip

PROCESS CP309
Power Transistor
NPN - Low Saturation Transistor Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
41.3 x 41.3 MILS
9.0 MILS
9.5 x 9.2 MILS
12.8 x 10.2 MILS
Al - 30,000Å
Au - 18,000Å
GROSS DIE PER 4 INCH WAFER
6,670
PRINCIPAL DEVICE TYPES
CMPT3090L
CXT3090L
CZT3090L
CMXT3090L
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R2 (15- September 2003)