CP305 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Small Signal Transistor NPN - High Current Transistor Chip

PROCESS CP305
Small Signal Transistor
NPN - High Current Transistor Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
31 x 31 MILS
9.0 MILS
5.9 x 11.8 MILS
6.5 x 13.8 MILS
Al - 30,000Å
Au - 18,000Å
GROSS DIE PER 4 INCH WAFER
11,300
PRINCIPAL DEVICE TYPES
2N3019
CMPT3019
CXT3019
CZT3019
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R2 (1-August 2002)