CP304V Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN - High Current Transistor Chip

PROCESS CP304V
Small Signal Transistor
NPN - High Current Transistor Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
22 x 22 MILS
7.1 MILS
5.7 x 3.9 MILS
5.3 x 3.9 MILS
Al - 30,000Å
Au - 18,000Å
GROSS DIE PER 4 INCH WAFER
23,048
PRINCIPAL DEVICE TYPES
MPSA05
MPSA06
w w w. c e n t r a l s e m i . c o m
R0 (30-August 2011)