CP289 Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – Power Transistors 8.0 Amp NPN - High Voltage Transistor Chip

PROCESS CP289
Power Transistors
8.0 Amp NPN - High Voltage Transistor Chip
PROCESS DETAILS
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
167 x 167 MILS
9.5 MILS
59 x 29 MILS
64 x 28 MILS
Al - 45,000Å
Ti/Ni/Ag - 3,000Å, 10,000Å, 10,000Å
GROSS DIE PER 5 INCH WAFER
558
PRINCIPAL DEVICE TYPES
MJE13009
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R0 (5- January 2006)