CP287 Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – Power Transistor 8.0 Amp NPN Silicon Power Transistor Chip

PROCESS CP287
Power Transistor
8.0 Amp NPN Silicon Power Transistor Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
130 x 130 MILS
9.5 MILS
37 x 20 MILS
38 x 20 MILS
Al - 45,000Å
Ti/Ni/Ag - (3000Å, 10,000Å, 10,000Å)
GEOMETRY
GROSS DIE PER 4 INCH WAFER
974
PRINCIPAL DEVICE TYPES
MJE13007
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R0 (26-July 2005)