CP283 Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – Power Transistor NPN - Silicon Power Transistor Chip

PROCESS CP283
Power Transistor
NPN - Silicon Power Transistor Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
68 x 68 MILS
9.5 MILS
18 x 11 MILS
18 x 12 MILS
Al - 45,000Å
Ti/Ni/Ag - (3000Å, 10,000Å, 10,000Å)
GEOMETRY
GROSS DIE PER 5 INCH WAFER
3,675
PRINCIPAL DEVICE TYPES
MJE13003
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R0 (20-January 2006)