CP275 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Power Transistor 4.0 Amp NPN Silicon Power Transistor Chip

PROCESS CP275
Power Transistor
4.0 Amp NPN Silicon Power Transistor Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
105 x 105 MILS
8.5 MILS
32 x 19 MILS
28 x 22 MILS
Al - 45,000Å
Ti/Ni/Ag - (300Å, 1,000Å, 10,000Å)
GEOMETRY
GROSS DIE PER 4 INCH WAFER
980
PRINCIPAL DEVICE TYPES
MJE13005
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R1 (28-March 2005)