CP273 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Power Transistor NPN- Silicon Power Transistor Chip

PROCESS CP273
Power Transistor
NPN- Silicon Power Transistor Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
68 x 68 MILS
8.5 MILS ± 0.6 MILS
17.7 x 10.2 MILS
18.1 x 8.9 MILS
Al - 30,000Å
Ag - 14,000Å
GROSS DIE PER 4 INCH WAFER
2,440
PRINCIPAL DEVICE TYPES
MJE13003
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R1 (28 -March 2005)