CP268 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Power Transistor NPN - High Voltage Transistor Chip

PROCESS CP268
Power Transistor
NPN - High Voltage Transistor Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
63 x 63 MILS
10 MILS
9 x 12 MILS
10 x 18 MILS
Al - 16,000Å
Au - 12,000Å
GROSS DIE PER 4 INCH WAFER
2,840
PRINCIPAL DEVICE TYPES
BUY49S
BSW68
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R1 (1-August 2002)