CP250 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN - High Voltage Transistor Chip

PROCESS CP250
Power Transistor
NPN - High Voltage Transistor Chip
PROCESS DETAILS
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
99 x 69 MILS
11.6 MILS
18 x 21 MILS
18 x 26 MILS
Al-Si - 60,000Å
Ti/Ni/Au - 5,500Å
GEOMETRY
B
E
GROSS DIE PER 5 INCH WAFER
2,500
PRINCIPAL DEVICE TYPE
CZTUX87
BACKSIDE COLLECTOR
R0
w w w. c e n t r a l s e m i . c o m
R0 (19-July 2010)