CP223 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Small Signal Transistor NPN - RF Transistor Chip

PROCESS CP223
Small Signal Transistor
NPN - RF Transistor Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
22 x 22 MILS
8.0 MILS
3.5 MILS DIAMETER
3.5 x 3.5 MILS
Al - 30,000Å
Au - 12,000Å
GROSS DIE PER 4 INCH WAFER
23,340
PRINCIPAL DEVICE TYPES
2N3866
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R1 (1-August 2002)