CP221 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Small Signal Transistor

PROCESS CP221
Small Signal Transistor
NPN- High Voltage Darlington Transistor Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL BASE
39.5 X 39.5 MILS
9.8 MILS
3.9 x 5.1 MILS
7.9 x 3.9 MILS
Al - 24,000Å
Au - 12,000Å
GROSS DIE PER 4 INCH WAFER
7,290
PRINCIPAL DEVICE TYPES
CZT2000
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
R1 (1-August 2002)