CP219_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Power Transistor NPN - High Current Transistor Chip

PROCESS CP219
Power Transistor
NPN - High Current Transistor Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
EPITAXIAL PLANAR
83 x 83 MILS
11 MILS
13.2 x 19.7 MILS
13.2 x 21.2 MILS
Al - 30,000Å
Au - 12,000Å
GEOMETRY
BACKSIDE COLLECTOR
GROSS DIE PER 4 INCH WAFER
1,670
PRINCIPAL DEVICE TYPES
2N5336
2N5337
2N5338
2N5339
2N5427
2N5428
2N5429
2N5430
D44H11
CJD44H11
w w w. c e n t r a l s e m i . c o m
R3 (22-March 2010)