CP219 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – Power Transistor NPN - High Current Transistor Chip

PROCESS CP219
Power Transistor
NPN - High Current Transistor Chip
Central^TM
Semiconductor Corp.
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
EPITAXIAL PLANAR
82 x 82 MILS
11 MILS
13.2 x 19.7 MILS
13.2 x 21.2 MILS
Al - 30,000Å
Au - 12,000Å
GEOMETRY
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: [phone]
Fax: [phone]
www.centralsemi.com
GROSS DIE PER 4 INCH WAFER
1,670
PRINCIPAL DEVICE TYPES
2N5336
2N5337
2N5338
2N5339
2N5427
2N5428
2N5429
2N5430
D44H11
CJD44H11
R2 (21-September 2003)